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AMSFAB Launches High-Speed and Array GaAs Photodetector Process Platform to Empower the Communication Industry

20252025-06-17 14:04:50

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On June 17, 2025, Advanced Micro Semiconductors Co., Ltd. (AMSFAB) officially launched its high-speed and array Gallium Arsenide (GaAs) Photodetector (PD) process platform. Featuring superior performance including low dark current, low capacitance, high responsivity, high bandwidth, and exceptional reliability, the platform marks a strategic expansion of AMSFAB’s portfolio in high-speed data communications and optical communications, enabling the company to provide customers with more comprehensive, efficient, and reliable optoelectronic solutions.


Devices fabricated on this platform deliver stable operation across a wide temperature range of -40°C to 85°C, ensuring performance consistency under harsh environmental conditions such as extreme cold and high heat and guaranteeing robust end-system reliability. In qualification testing, the platform’s devices have successfully passed the Telcordia GR-468 standard, encompassing critical reliability assessments such as High Temperature Operating Life (HTOL), Electrostatic Discharge (ESD), Temperature Cycling (T/C), and Temperature Humidity Bias (THB). Specifically, under HTOL testing at 175°C and THB conditions (85°C/85% RH) with a -5V bias applied, three independent production lots (77 samples each) underwent 2,000 hours of stress testing with zero failures. These results fully meet telecom-grade reliability standards.


Built on 4-inch GaAs/AlGaAs heterojunction epitaxial technology, AMSFAB’s GaAs PD process platform integrates critical fabrication steps including deep mesa etching, sidewall passivation, and BCB/PBO planarization. This process architecture not only guarantees exceptional device uniformity and stability but also facilitates mass production scale-up and effectively drives down production costs. Notably, by leveraging synergistic optimization with AMSFAB’s proprietary Vertical-Cavity Surface-Emitting Laser (VCSEL) platform, the foundry can provide customers with highly cost-effective, low-power integrated transceiver solutions. This capability will accelerate the deployment of high-speed optical networks and drive greater efficiency across the optoelectronics supply chain.


As one of the few foundries with dual platforms for photodetectors and lasers across GaAs and InP material systems, AMSFAB has established comprehensive, end-to-end capabilities spanning epitaxial growth, wafer fabrication, and reliability qualification to address diverse customer requirements. The launch of this GaAs PD platform further strengthens AMSFAB’s competitive edge in optical communication, empowering customers to seize market opportunities through premium foundry services and co-shaping the next generation of communication technologies.