On March 10, Advanced Micro Semiconductors Co., Ltd. (AMSFAB) officially launched its 650V GaN-on-Si enhancement-mode (E-mode) power foundry platform. Engineered for exceptional high-frequency switching efficiency, ultra-low gate charge, and low on-resistance, the platform delivers a robust solution for next-generation high-speed, high-efficiency power applications. This process platform is an excellent choice for consumer electronics, industrial automation, data centers, and new energy vehicles, underscoring its strong commercial viability.

The platform integrates a p-GaN cap gate structure with CMP-enabled tungsten plug and aluminum interconnect metallization, enabling precise device topology control and low surface trap states. Critical reliability parameters—including HTRB, HTGB, and DHTOL—fully comply with JEDEC standards, guaranteeing long-term operational stability for all qualified mass-produced devices.

Furthermore, devices fabricated on this platform deliver highly competitive performance, featuring a low specific on-resistance (Rsp) of ~350 mΩ·mm² and an outstanding figure of merit (Ron·Qg) of ~300 mΩ·nC. This effectively breaks the traditional trade-off between switching and conduction losses, delivering substantial cost advantages and performance gains for customers.

As a dedicated compound semiconductor foundry, AMSFAB provides customers with upfront design-in support to ensure devices meet stringent performance and reliability targets. Engineering samples on this platform already benchmark industry-leading metrics and have cleared multi-customer qualification, sharply reducing time-to-market. 

Moving forward, AMSFAB will scale R&D investment to roll out cost-optimized, high-efficiency solutions with enhanced reliability, directly addressing the market’s demand for faster, lighter, and more energy-efficient electronic devices.